Full-Band Quantum Transport Simulation Based on Tight-Binding Green’s Function Method
نویسندگان
چکیده
Modeling and formulation of full-band quantum transport based on a nonequilibrium tight-binding Green’s function method are presented where realistic band structures, evanescent-mode matching, space charge effect, and scattering effects are taken into account. Our results show that current-voltage characteristics of a GaAs/AlAs double-barrier RTD have larger current densities than the conventional single band model since the latter model is found to overestimate the decay constant in the barriers. I t should be also noted that the full-band nature and polar optical phonon scattering effects significantly change the results of conventional RTD simulations.
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تاریخ انتشار 2004